Impact of Strain on Drain Current and Threshold Voltage of Nanoscale Double Gate Tunnel Field Effect Transistor: Theoretical Investigation and Analysis

摘要

Tunnel field effect transistor (TFET) devices are attractive as they showgood scalability and have very low leakage current. However they suffer fromlow on-current and high threshold voltage. In order to employ the TFET forcircuit applications, these problems need to be tackled. In this paper, a novellateral strained double-gate TFET (SDGTFET) is presented. Using devicesimulation, we show that the SDGTFET has a higher on-current, low leakage, lowthreshold voltage, excellent subthreshold slope, and good short channel effectsand also meets important ITRS guidelines.